Multitarget Sputtering Using Decoupled Plasmas.
ILLINOIS UNIV AT URBANA-CHAMPAIGN COORDINATED SCIENCE LAB
Pagination or Media Count:
A model is derived for quantitatively predicting the chemical composition and thickness distributions of multielement films deposited by decoupled-plasma multitarget RF sputtering in which the substrates rotate at a variable rate through separate glow discharges. The model directly accounts for deposition variables such as target voltages, sputtering pressure, substrate rotation radius, rotation rate, and target-substrate separation distance. The effects of substrate heating andor biasing are also considered. Predicted film thickness distributions were found to agree very well with experimental results in which beta back-scattering was used to measure the thickness of films deposited from InSb and GaSb targets on both stationary and rotating substrates. Using deposition parameters determined from the model presented in this paper, it is possible to grow single phase stoichiometric alloy films of any desired composition. In addition, intercalated films with layer thicknesses of less than 100 A and films which are chemically graded in the lateral and in-depth directions can be grown. Author
- Manufacturing and Industrial Engineering and Control of Production Systems
- Plasma Physics and Magnetohydrodynamics
- Solid State Physics