Accession Number:

ADA025607

Title:

Acceptor Behavior of Implanted Beryllium in Gallium Arsenide and Gallium Arsenide Phosphide.

Descriptive Note:

Technical rept.,

Corporate Author:

ILLINOIS UNIV AT URBANA-CHAMPAIGN COORDINATED SCIENCE LAB

Personal Author(s):

Report Date:

1976-04-01

Pagination or Media Count:

194.0

Abstract:

Beryllium is known to be an acceptor in GaAs. Controlled Be doping of GaAs by standard diffusion or growth processes is very difficult. Its small mass, however, makes it more suitable for ion implantation doping of GaAs and GaAs1-xPx than Zn, which is the conventional acceptor. Implanted Zn diffuses rapidly during the anneal in these materials. Thus Zn implantation serves as a predeposition rather than a method of controlled doping. Photoluminescence and electrical measurements on Be-implanted GaAs and GaAs1-xPxx approx. 0.38 presented in this work indicate excellent impurity activation and lattice reordering after room temperature implantation and suitable annealing. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE