Inverse Mean Free Path, Stopping Power, CSDA Range, and Straggling in Silicon and Silicon Dioxide for Electrons of Energy < or = 10 keV.
Interim rept. Dec 75-Mar 76,
OAK RIDGE NATIONAL LAB TENN
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The interaction of electrons with the solids Si and SiO2 is described based on a modified electron gas model for the valence band electrons in Si, a model insulator theory for the valence band electrons in SiO2, and inner shell ionization derived from atomic, generalized oscillator strengths. Contributions to the inverse mean free path and stopping power from the various interaction processes are tabulated for electron energies from threshold approximately equal 4 eV above Fermi level to 10 keV for Si and from 10 eV to 10 keV for SiO2. Electron range in the continuous slowing-down approximation and straggling are tabulated for electron energies from 10 eV to 10 keV for both materials.
- Solid State Physics