Technology and Physics of Infrared and Point Contact Diodes
Semiannual technical rept. no. 3, 1 May-31 Oct 1975
MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF PHYSICS
Pagination or Media Count:
Background work for this contract, performed by this laboratory, has shown that tunneling characteristics of junctions formed by a very thin dielectric layer sandwiched between two metals is independent of frequency from DC through 10 micrometers wave length. Principal work done this period was on the optical response of Al-Al2O3-Al junctions. These demonstrated characteristic photoemission response with considerable bolometric effect. An analysis of the data showed that the model is consistent with experimental results and correctly predicts behavior at lower frequencies. Work was done on Al-Al2O3-Pb junctions in the far infrared at liquid nitrogen and liquid helium temperatures equipment difficulties precluded obtaining new information. Three talks were given and three articles submitted for publication during this period.
- Electrooptical and Optoelectronic Devices
- Solid State Physics