Accession Number:

ADA025294

Title:

Investigation of Electronic Transport, Recombination and Optical Properties in InAs sub 1-x P sub x Alloy Systems

Descriptive Note:

Final rept. Dec 1973-Apr 1976

Corporate Author:

FLORIDA UNIV GAINESVILLE ENGINEERING AND INDUSTRIAL EXPERIMENT STATION

Personal Author(s):

Report Date:

1976-05-01

Pagination or Media Count:

146.0

Abstract:

An experimental study has been made of the transport properties of InAs1-xPx grown epitaxially from the vapor phase onto semi-insulating GaAs substrates. The hydrogen carrier gas flow rate was varied for four sets of samples of InAs0.61P0.39 with changing thickness between sets. A fifth set was investigated with varying composition. Resistivity and Hall effect measurements from 3K to 300K yielded electron mobilities as high as 13,100 sq cmvolt-sec at 77K and electron concentrations from 1.5 x 10 to the 16th power cc to 8 x 10 to the 16th powercc at 300K. Transport at low temperatures T30K is attributed to the formation of a donor impurity band. Optical transmission measurements and electron microprobe analyses were made on bulk InAs1-xPx samples of different compositions. Absorption coefficient as a function of wavelength near the fundamental absorption edge was deduced from transmission data. Energy band gap versus alloy composition was determined for these samples for 0 or x or 1. Surface photovoltage technique was employed to determine the hole diffusion length on three n-type InP specimens with 111 and 100 orientations. The measured hole diffusion length was found to be independent of the surface conditions.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE