Properties of Semiconductor Materials for High-Power Microwave Generation.
Final rept. 1 Apr 71-31 Jan 76,
MICHIGAN UNIV ANN ARBOR ELECTRON PHYSICS LAB
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The objectives of this program were to study the fundamental properties of semiconductor materials and devices and their utilization in microwave power generation, amplification, detection, and control and thus ultimately to improve the state of the art in microwave devices. Work was conducted in the following areas IMPATT Devices, Properties of BARITT Devices, BARITT Device Fabrication and Results, Tunnel Transit-Time Devices, Baritt Varactors, and Video Detectors and Mixers Using BARITT Devices. Author
- Electrical and Electronic Equipment
- Solid State Physics