Damage Profiles in Silicon and Their Impact on Device Reliability. Part 2
Technical rept. no. 7, 1 Jul-31 Dec 1975
IBM CORP HOPEWELL JUNCTION NY EAST FISHKILL LABS
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The report consists of two chapters. Chapter 1 discusses experimental and theoretical investigations of the growth kinetics of oxidation induced stacking faults. Theoretically, it is shown that growth of stacking faults can be described through condensation of silicon interstitials at the fault site during oxidation. Condensation of silicon interstitials is controlled through a tensile stress in the silicon surface generated during the formation of the SiO2 film on the silicon surface. Good agreement between experimental and calculated data for fault length and activation energy is obtained. Chapter 2 discusses the technique of Impact Sound Stressing ISS.
- Electrical and Electronic Equipment
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