Accession Number:

ADA024809

Title:

Survey of Radiation Effects in Metal-Insulator-Semiconductor Devices.

Descriptive Note:

Technical rept.,

Corporate Author:

HARRY DIAMOND LABS ADELPHI MD

Personal Author(s):

Report Date:

1975-11-01

Pagination or Media Count:

124.0

Abstract:

This report reviews the effects of radiation on metal-insulator-semiconductor MOS devices. It briefly provides some of the background physics, chemistry, and analytical tools needed to discuss the MOS structures, and then reviews the effects of radiation on the characteristics of the devices. Most of the review concerns device fabrication and the processes that have been considered for improving radiation resistance of devices. Finally, the present status of the MOS technology is discussed, as well as remaining problems that must be solved to make the MOS technology applicable to radiation environments and to large-scale integration.

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE