Low Loss Low Hold Power Diode Phase Shifter Development.
Final rept. Nov 74-Feb 76,
RCA GOVERNMENT COMMUNICATIONS SYSTEMS SOMERVILLE N J ADVANCED COMMUNICATIONS LAB
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This report covers the design and test results on a Metal-Insulator-Semiconductor diode phase shifter operated at 3.5 GHz. The four bit phase shifter required less than 1 microamp of bias current in any phase shift state. The breadboard model was tested over a 5 bandwidth with 3.65 db of insertion loss, 100 mw of power handling capability, and 50 nanoseconds of switching rise time.
- Electrical and Electronic Equipment