Accession Number:

ADA024752

Title:

A Theoretical Study of the Permanent and Transient Effects of Ionizing Radiation on the Electrical Performance of Metal Oxide Semiconductor on Sapphire Inverters.

Descriptive Note:

Final rept.,

Corporate Author:

AIR FORCE WEAPONS LAB KIRTLAND AFB N MEX

Report Date:

1976-02-01

Pagination or Media Count:

137.0

Abstract:

The results of theoretical calculations on the electrical performance of p-channel metal oxide semiconductorsilicon on sapphire and complementary metal oxide semiconductor on sapphire inverters subjected to ionizing radiation are presented. Permanent changes are related to threshold voltage and, thus, are applicable to many fabrication technologies. Transient effects have been characterized for typical MOSSOS photocurrents. For each inverter type the influence of threshold voltage and gain effects on normal DC operation, switching speed and noise margin are determined. The transient photocurrent effects on output voltage and noise margins are also presented. Every effort has been made to make the results generally applicable. Where that is not possible, specific inverters have been used to illustrate results. A first order model based on the simplified Sah equations with fixed mobility and fixed capacitance has been used in these studies. Author

Subject Categories:

  • Electric Power Production and Distribution
  • Nuclear Radiation Shielding, Protection and Safety
  • Radioactivity, Radioactive Wastes and Fission Products
  • Electricity and Magnetism
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE