Reliability of Deposited Glass.
Final technical rept. Mar 74-Apr 75,
ROCKWELL INTERNATIONAL ANAHEIM CALIF
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Presented in this report is a study of the reliability of deposited glass used to protect the surface of integrated circuits and MOS devices. The devices studied were representatives of commercially available circuits used in military systems currently. A total of 793 devices were used for the study. They were purchased from six different suppliers and included linear integrated circuits, digital integrated circuits, PMOS circuits, and CMOS digital circuits. The devices contained either chemically vapor deposited silicon dioxide or electron beam evaporated quartz as glass protective layers. The devices had aluminum metallization systems. The deposited glass layers on these device types were characterized according to their electrical, chemical and structural properties. The stress behavior of the deposited glass was studied under various stress conditions which included thermal shock, temperature cycling, high temperature reverse bias, burn-in, and moisture resistance tests as specified in MIL-STD-883. Additional studies were made under other environments such as radiation, 260 C burn-in, and power onoff cycling. Detailed failure analysis was performed on all failures to identify and characterize failures that were associated with deposited glass layers. The behavior of the deposited glass layers on these devices was compared to devices used in military programs such as the Minuteman program.
- Electrical and Electronic Equipment
- Ceramics, Refractories and Glass