Accession Number:

ADA024291

Title:

Transverse Acoustoelectric Voltage Inversion and Its Application to Semiconductor Surface Study: CdS.

Descriptive Note:

Technical rept.,

Corporate Author:

RENSSELAER POLYTECHNIC INST TROY N Y DEPT OF ELECTRICAL AND SYSTEMS ENGINEERING

Personal Author(s):

Report Date:

1976-03-29

Pagination or Media Count:

30.0

Abstract:

The transverse acoustoelectric voltage inversion has been observed in CdS. It is found to be due to the inversion of the semiconductor surface. The inversion layer results from a high magnitude of the dc transverse acoustoelectric voltage developed on the semiconductor surface. The acoustoelectric voltage inversion is strongly dependent on the wavelength and intensity of light illuminating the semiconductor surface, and the power input of the SAW. The sub bandgap spectral response of the transverse acoustoelectric voltage determines the positions of the surface states in the energy gap. The above bandgap spectrum determines the photon energy in which transition from bulk to surface absorption takes place and the photon energy for complete surface absorption. Author

Subject Categories:

  • Acoustics
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE