Anisotropic Transport Effects in FETS.
CALIFORNIA UNIV LOS ANGELES SCHOOL OF ENGINEERING AND APPLIED SCIENCE
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The project deals with investigations into charge transport and subbanding in semiconductor FET systems. It has been observed that the transport anisotropy diminishes with decreasing MOSFET inversion density. This is interpreted as a washing-out of the subband structure by the channel width modulating effects of the trapped surface charge and is quantitatively explained in terms of two conductivity contributions, one isotropic and one anisotropic. Subbanding in a J-FET system is treated. Several novel applications of subbanding systems are proposed.
- Electrical and Electronic Equipment
- Solid State Physics