Accession Number:

ADA023913

Title:

Manufacturing Methods and Technology Engineering High Efficiency, High Power Gallium Arsenide Read-Type IMPATT Diodes.

Descriptive Note:

Quarterly rept. no. 2, 1 Oct-31 Dec 75,

Corporate Author:

RAYTHEON CO WALTHAM MASS SPECIAL MICROWAVE DEVICES

Personal Author(s):

Report Date:

1975-12-31

Pagination or Media Count:

105.0

Abstract:

Procedures have been developed for the complete evaluation of gallium arsenide wafers beginning at wafer growth up to final evaluation of finished diodes fabricated from the wafers. The system allows traceability of final data back to the original location or site in the epitaxial reactor. Using the system, evaluation results are presented for wafers processed during the period. Some of the wafers processed exhibit good uniformity of characteristics. The first operating life test has been completed.

Subject Categories:

  • Electrical and Electronic Equipment
  • Fabrication Metallurgy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE