Glow Discharge Optical Spectroscopy for Measurement on Boron Implanted Distributions in Silicon.
ILLINOIS UNIV AT URBANA-CHAMPAIGN COORDINATED SCIENCE LAB
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Ion implantation has become a common method for introducing impurities into semiconductors. The energy and amount of the impurities can be accurately measured during implantation. This affords a control and reproducibility which cannot be matched by standard diffusion techniques. The implanted atoms come to rest in the substrate with a certain distribution or profile. The impurity profile must be known to take full advantage of ion implantation. The profile is a complex function of impurity mass and energy, substrate, and crystal orientation. Author
- Test Facilities, Equipment and Methods
- Solid State Physics