Accession Number:

ADA023441

Title:

Glow Discharge Optical Spectroscopy for Measurement on Boron Implanted Distributions in Silicon.

Descriptive Note:

Technical rept.,

Corporate Author:

ILLINOIS UNIV AT URBANA-CHAMPAIGN COORDINATED SCIENCE LAB

Personal Author(s):

Report Date:

1976-03-01

Pagination or Media Count:

53.0

Abstract:

Ion implantation has become a common method for introducing impurities into semiconductors. The energy and amount of the impurities can be accurately measured during implantation. This affords a control and reproducibility which cannot be matched by standard diffusion techniques. The implanted atoms come to rest in the substrate with a certain distribution or profile. The impurity profile must be known to take full advantage of ion implantation. The profile is a complex function of impurity mass and energy, substrate, and crystal orientation. Author

Subject Categories:

  • Test Facilities, Equipment and Methods
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE