Accession Number:

ADA023274

Title:

Inert Carrier Process Application to HMX Nitrolysis and Recrystallization. Volume II. HMX Recrystallization.

Descriptive Note:

Final rept. 14 Feb 75-16 Feb 76,

Corporate Author:

UNITED TECHNOLOGIES CORP SUNNYVALE CALIF CHEMICAL SYSTEMS DIV

Personal Author(s):

Report Date:

1976-03-16

Pagination or Media Count:

38.0

Abstract:

Feasibility of recrystalling HMX in the CSD ICP pilot plant using the solventnonsolvent precipitant technique has been shown. Water wet HMX with .3-percent acetic acid, representative of crude HMX from the Bachman process, has been dissolved and recrystallized as the beta polymorph meeting military specifications for size and purity. HMX classes 1 and 5, of interest in this contract, were obtained however, class 4 was not made. HMX classes 2 and 6 as well as some above the class 1 size were made during the process variables studies. These variables included 1 solvents and nonsolvents in varying ratios. 2 temperature, 3 filtration and washing capability, 4 crystal growth and nucleation variables, 5 occluded inpurities, and 6 HMX concentration in solvent recycles. Teflon lined, teflon coated, and high nickel stainless steels were found to be suitable construction materials. Teflon was the preferred seal material however, silicone O-rings, in locations where Teflon was unusable, were found to be a short term solution. Author

Subject Categories:

  • Polymer Chemistry
  • Ammunition and Explosives

Distribution Statement:

APPROVED FOR PUBLIC RELEASE