Electron Beam-Semiconductor Power Accumulator.
Research and development technical rept.,
ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
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A feasibility investigation on the combining of power outputs from several electron beam-semiconductor EBS diodes, operating Class B, was undertaken. A feasibility model for the 500 - 1000 MHz band was designed, fabricated, and tested. The design makes use of plug-in tubes, each of which is a self-contained, replaceable unit amplifier. Each unit amplifier contains an EBS diode as well as grid modulation and electron gun structures. The design includes impedance matching networks for the input to the grid-cathode, as well as for the diode output. Results demonstrate the feasibility of the device, but additional diode development is required in order for the device to fulfill its potential. Author
- Electrical and Electronic Equipment
- Solid State Physics