Accession Number:

ADA023009

Title:

Multiphonon Raman Scattering in Si and AlAs.

Descriptive Note:

Technical rept.,

Corporate Author:

YALE UNIV NEW HAVEN CONN DEPT OF ENGINEERING AND APPLIED SCIENCE

Report Date:

1976-03-01

Pagination or Media Count:

7.0

Abstract:

Resonance Raman scattering in semiconductors with indirect band gaps has been investigated in order to manifest the contribution of the iterative electron-one phonon process to second-order Raman scattering. The authors have searched without success for Raman peaks associated with intervalley scattering among multivalleys. Three- and four-phonon features in Si and AlAs have been observed and are compared with the two-phonon scattering strength.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE