Accession Number:

ADA022970

Title:

Semiconductor-Insulator Structures for the 1- to 2-Micrometers Region

Descriptive Note:

Interim technical rept.

Corporate Author:

TEXAS INSTRUMENTS INC DALLAS CENTRAL RESEARCH LABS

Report Date:

1974-02-22

Pagination or Media Count:

44.0

Abstract:

The goal of this contract is to develop, fabricate, evaluate, and deliver to NVL thin-film structures consisting of semiconductors having bandgaps on the order of 0.7 eV and compatible insulators. The following requirements are also goals High-field tunneling transport, Semiconductor surface passivation, Semiconductor masking for diffusion and selective etching, Surface charge transport, Antireflection coatings. Activities of the program include semiconductor material preparation GaInAs, insulator preparation, and characterization by both electrical and nonelectrical techniques of semiconductor-insulator structures. The primary semiconductor vehicles for this study have been GaSb and GaInAs, but early work was done on germanium silicon was used as a control substrate for insulator depositions throughout the program.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE