Accession Number:

ADA022695

Title:

Integrated Optical Circuits

Descriptive Note:

Semiannual technical summary rept. 1 Jan-30 Jun 1975

Corporate Author:

MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB

Personal Author(s):

Report Date:

1975-06-30

Pagination or Media Count:

19.0

Abstract:

Attenuation measurements in epitaxial n-GaAs waveguides of different purity show that losses of 2 cm can be achieved at energies within 50 meV of the band edge using material with N sub D N sub A or 2 x 10 to the 15thcu cm. The electroabsorption coefficient of low-loss GaAs waveguides has been measured in uniform electric fields at wavelengths from 0.91 to 0.93 micrometers. Electroabsorption detectors and modulators have been integrated into these waveguides. A Schottky-barrier electroabsorption modulator has been combined with a GaAs-AlGaAs laser integrated into a high-purity GaAs waveguide to form a completely integrated IOC source. PbSnTe liquid-phase epitaxial layers have been grown on top of lambda2 gratings fabricated in PbTe to form PbSnTe heterostructure distributed feedback laser structures. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Fiber Optics and Integrated Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE