Sputtered Thin Film Research
Final rept. 15 Apr 1972-31 Jan 1976
UNITED TECHNOLOGIES RESEARCH CENTER EAST HARTFORD CT
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This report discusses the results of an investigation regarding the potential of the high dielectric constant materials SrTiO3, WO3 and HfO2 as alternate gate insulators for radiation hardened insulated gate field effect transistors. The insulators were deposited by rf sputtering. Capacitor structure fabricated with SrTiO3 and WO3 films did not show adequate stability under bias and temperature stress to be useful gate dielectrics. Reactively sputtered hafnium dioxide MIS capacitors exhibited far more stable characteristics with bias and temperature stress, although slow trapping effects were observed at high bias voltages. Hafnium dioxide MIS capacitors irradiated with Co60 gamma rays to a dose of 10 to the 7th power rads showed a high degree of radiation tolerance. Based on these encouraging results, n-channel and p-channel transistors with hafnium dioxide gate insulators were fabricated.
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