Accession Number:

ADA021653

Title:

Applications of Ion Beams to Modify the Properties of Materials

Descriptive Note:

Conference rept.

Corporate Author:

OFFICE OF NAVAL RESEARCH LONDON (UNITED KINGDOM)

Personal Author(s):

• Wolicki, E. A.
• Butler, J. W.
• Dunning, K. L.
• Hirvonen, J. K.

Report Date:

1976-01-27

Pagination or Media Count:

12.0

Abstract:

Ion implantation can modify the properties of materials by changing their electrical, optical, chemical or mechanical properties, and this technique is already in commercial use for production of semiconductor devices. The 65 papers presented at the conference on Applications of Ion Beams to Materials U. of Warwick, 8-12 Sept 1975 covered the applications of ion beams to semiconductors, insulators, and metals and included studies of radiation damage. All these aspects of the conference proceedings are summarized in this report, which also contains background material for the non-specialist.

Descriptors:

• *SEMICONDUCTORS
• *ION IMPLANTATION
• *WORKSHOPS
• *ION BEAMS
• IMPURITIES
• WEAR
• SURFACE CHEMISTRY
• STORAGE
• FRICTION
• SOLID STATE PHYSICS
• RADIATION EFFECTS
• UNITED KINGDOM
• DAMAGE
• CORROSION
• SCIENTIFIC RESEARCH
• METALS
• ANNEALING

Subject Categories:

• Information Science
• Particle Accelerators
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE