Effect of Processing Conditions on Microwave Dielectric Properties of Reaction-Sintered Silicon Nitride.
ARMY MATERIALS AND MECHANICS RESEARCH CENTER WATERTOWN MASS
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It is shown that unreacted silicon at levels above 0.5 to 0.6 weight percent seriously degrades the dielectric properties of reaction-sintered silicon nitride. The use of fine particle size silicon and various oxide additives were both effective in reducing unreacted silicon. Measurements of dielectric properties by two facilities were in good agreement, and those properties appear adequate for radome applications at temperatures up to the highest temperature of measurement, 1000C.
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