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Luminescence from Copper-Doped and Undoped Gallium Phosphide.
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING
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A luminescence study of high-purity GaP and GaPCu was made to determine the identity of inadvertent impurities present in the crystals. The GaP crystals were excited with an argon ion laser operating at 4579A and 100mw of power. The luminescence was detected photoelectrically for sample temperatures ranging from 4.2K to 100K. The identification of the impurities was made by comparing the luminescence spectra from the samples with the luminescence spectra for GaP found in the literature. The inadvertent impurities present were identified as nitrogen, sulfur, carbon, silicon and possibly oxygen for the copper-doped samples. In addition, a possible source of the impurities is suggested.
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