Accession Number:

ADA019857

Title:

Study of a Phosphorus Planar Diffusion Source.

Descriptive Note:

Master's thesis,

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING

Personal Author(s):

Report Date:

1975-12-01

Pagination or Media Count:

83.0

Abstract:

A phosphorus planar diffusion source PDS is a ceramic-like material in wafer form which is placed in the diffusion furnace with the silicon wafers. Each PDS wafer can be used to dope one or two silicon wafers, providing phosphorus atoms which diffuse into the silicon. The main objective of the thesis has been to obtain experimental data on the sourcing characteristics of the phosphorus PDS in preparation for their use in the manufacture of devices. The parameters which characterize the sourcing ability of a material, and which were therefore studied are the time, temperature, ambient gas, and ambient gas flow rates. The spacing and position of the PDS in relation to the silicon wafers are parameters unique to the PDS and were also investigated.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE