Accession Number:

ADA019303

Title:

Study of Electronic Transport and Breakdown in Thin Insulting Films

Descriptive Note:

Semi-annual technical rept.

Corporate Author:

PRINCETON UNIV NJ DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE

Report Date:

1974-07-01

Pagination or Media Count:

14.0

Abstract:

An overview is given of progress in the study of high-field electronic transport and dielectric breakdown in thin 1000-5000 A insulating films on silicon. The principal results to date are on SiO2 also under study are Al2O3, Si3N4, and layered composites. The studies include corona-induced nondestructive breakdown, self-quenched breakdown, effects of electron irradiation, study of charge-carrier trapping, study of lateral nonuniformities, electron-beam probing of the insulator-semiconductor interface, and theoretical modeling of hot-electron distributions and of localized breakdown.

Subject Categories:

  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE