Neutron Hardness Assurance for Bipolar Transistors through Determination of Physical Parameters.
NAVAL AMMUNITION DEPOT CRANE IND
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A nondestructive method of neutron radiation hardness assurance is developed for bipolar transistors using a detailed one-dimensional model to obtain the powers sensitivity parameters relating postirradiation h sub FE and V sub CEsat at any operating point to preirradiation physical parameters and preirradiation electrical measurements at specified operating points. The transistor model uses physical dimensions, doping concentrations, diffusion constants, electric fields, and minority carrier lifetimes determined from terminal electrical measurements. The sensitivity parameters are applied to 1 predicting postirradiation h sub FE and V sub CEsat from preirradiation electrical measurements and the physical parameters extracted from them and 2 establishing upper or lower bounds on preirradiation physical parameters. In this study, sensitivity parameters are calculated for a medium-power double-diffused planar epitaxial NPN device 2N2222A.
- Electrical and Electronic Equipment