The Use of Ion Implantation for the Control of Impurity Diffusion in III-V Compound Semiconductors.
Final rept. 1 May 72-30 Apr 75,
STANFORD UNIV CALIF STANFORD ELECTRONICS LABS
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The report summarizes research carried out under one Contract. The principal results obtained were 1 Proton-enhanced diffusion was used for the first time to obtain Se diffusion in GaAs. Seventy percent electrical activity was obtained for a dose of 10 to the 14th power Sesq cm, which is the highest electrical activity yet reported for this dose level. 2 A theory was developed to explain the relatively low doping efficiency of n-type dopants in GaAs, a phenomenon that is always present though especially apparent in ion-implanted samples. 3 Wide range control over the diffusion coefficient of Zn in GaAs0.6P0.4 was obtained through the use of multiple implants of Zn, Ga, As, andor P. A theory was developed to explain the magnitude of the control in terms of thermodynamic restrictions on the range of gallium vacancy concentrations that can exist at equilibrium in the material. 4 Proton-enhanced diffusion PED was used to introduce Cd into InSb. A new Cd diffusion source and a new technique for the anodic stripping of InSb were developed in the course of the work.
- Electrooptical and Optoelectronic Devices
- Fabrication Metallurgy
- Solid State Physics