Accession Number:

ADA018760

Title:

The Use of Ion Implantation for the Control of Impurity Diffusion in III-V Compound Semiconductors.

Descriptive Note:

Final rept. 1 May 72-30 Apr 75,

Corporate Author:

STANFORD UNIV CALIF STANFORD ELECTRONICS LABS

Personal Author(s):

Report Date:

1975-09-01

Pagination or Media Count:

16.0

Abstract:

The report summarizes research carried out under one Contract. The principal results obtained were 1 Proton-enhanced diffusion was used for the first time to obtain Se diffusion in GaAs. Seventy percent electrical activity was obtained for a dose of 10 to the 14th power Sesq cm, which is the highest electrical activity yet reported for this dose level. 2 A theory was developed to explain the relatively low doping efficiency of n-type dopants in GaAs, a phenomenon that is always present though especially apparent in ion-implanted samples. 3 Wide range control over the diffusion coefficient of Zn in GaAs0.6P0.4 was obtained through the use of multiple implants of Zn, Ga, As, andor P. A theory was developed to explain the magnitude of the control in terms of thermodynamic restrictions on the range of gallium vacancy concentrations that can exist at equilibrium in the material. 4 Proton-enhanced diffusion PED was used to introduce Cd into InSb. A new Cd diffusion source and a new technique for the anodic stripping of InSb were developed in the course of the work.

Subject Categories:

  • Electrooptical and Optoelectronic Devices
  • Fabrication Metallurgy
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE