Gallium Arsenide Photocathode Development
Final technical rept. 6 Jun 1973-31 Dec 1974
EPSCO LABS STAMFORD CT
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This report presents the final results of a task to investigate III- V photoemitter technology for application to image sensors. Investigations of crystal surface preparation, the physics of GaAs photoemission, photocathode processing techniques, GaAs photocathode characteristics and reprocessing techniques have been completed. Emphasis was placed on the development of a transmissive GaAs photocathode with sensitivity, uniformity, size and life suitable for high resolution low light level imaging applications.
- Electrical and Electronic Equipment
- Solid State Physics