Accession Number:

ADA018519

Title:

Experimental Analysis of Impurity Energy Levels in Semiconductors.

Descriptive Note:

Final rept. 1 Nov 70-30 Jun 74,

Corporate Author:

UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES ELECTRONIC SCIENCES LAB

Personal Author(s):

Report Date:

1975-10-20

Pagination or Media Count:

13.0

Abstract:

The major emphasis of this investigation was intended as a clarification of the extent to which deep-lying impurity levels can be explored capacitively in metal-semiconductor systems. A simple lumped constant equivalent circuit representation was developed for a distribution of energy levels of majority carrier trapping centers in Schottky barriers. An improved electronically balanced broad band capacitance measuring system was designed, built for measurements from about 10 H z to 200 kHz. The Hf-p type Si Schottky barrier system was investigated and shown to have approximately 0.6 ev barrier height. The hole capture cross-section for In in p-type Si was measured over the temperature range 58 K to 133 K.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE