Accession Number:

ADA018090

Title:

Investigation of Technological Problems in GaAs

Descriptive Note:

Semi-annual technical rept. no. 1

Corporate Author:

ROCKWELL INTERNATIONAL CORP THOUSAND OAKS CA SCIENCE CENTER

Report Date:

1975-07-25

Pagination or Media Count:

116.0

Abstract:

Various technological problems in the development of GaAs microwave devices are covered in this report. The work reported here includes epitaxial growth of high-resistivity and multiple ultra-thin films, study of the relationship between device performance and material parameters using FETs and p-n junctions, study of noise and impact ionization coefficients in IMPATT structures under high electrical field, preparation of high-quality oxide films for surface passivation, growth of semi-insulating substrates, and characterization techniques and study of ion implantation as a tool for microwave device fabrication. The activities and the progress made during the six-month period are described in separate sections.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE