Effects of Heavy Doping on the I-V Characteristics of Schottky Barrier and P-N Junctions.
ARMY MATERIEL SYSTEMS ANALYSIS ACTIVITY ABERDEEN PROVING GROUND MD
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This research derives expressions which show that the current-voltage characteristics of Schottky Barrier and P-N junctions are modified when doping levels are increased to degenerate levels. Such doping in these devices are extant in state-of-the-art technology for high-speed switches and highly stable currentvoltage regulators. The experimental items for this research were Schottky-Barrier Al n - Si zener diodes. Good agreement was established between the degenerate theory and the more highly doped Schottky Barrier samples.
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