Accession Number:

ADA017948

Title:

Effects of Heavy Doping on the I-V Characteristics of Schottky Barrier and P-N Junctions.

Descriptive Note:

Technical rept.,

Corporate Author:

ARMY MATERIEL SYSTEMS ANALYSIS ACTIVITY ABERDEEN PROVING GROUND MD

Personal Author(s):

Report Date:

1975-07-01

Pagination or Media Count:

191.0

Abstract:

This research derives expressions which show that the current-voltage characteristics of Schottky Barrier and P-N junctions are modified when doping levels are increased to degenerate levels. Such doping in these devices are extant in state-of-the-art technology for high-speed switches and highly stable currentvoltage regulators. The experimental items for this research were Schottky-Barrier Al n - Si zener diodes. Good agreement was established between the degenerate theory and the more highly doped Schottky Barrier samples.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE