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Preparation and Properties of Al(x)Ga(1-x)Sb for Application to Luminescent Devices.
Final technical rept.,
STANFORD UNIV CALIF SOLID-STATE ELECTRONICS LAB
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The ternary phase diagram of the Al-Ga-Sb system was established in the Ga-rich region. AlxGa1-xSb layers with Al concentration x varying from 0.0 to 0.92 were grown on 111 oriented GaSb substrates in a Ga-rich melt using a vertical dipping liquid phase epitaxy system. The dependence of bandgap energy on Al concentration x in the mixed crystal was measured in undoped layers using optical absorption wavelength modulated absorption, photoluminescence and electron beam microprobe techniques at 77 and 300K. The infrared lattice vibration spectra of the AlxGa1-xSb system were studied in the reststrahlen region. Room temperature reflectance spectra were measured in a double beam mode at near normal incidence in the spectral range from 180 to 520cm. The composition dispersion in the TO phonon branches was studied by using the random element isodisplacement REI model. The six-parameter REI model was found to be the best approach in describing the AlxGa1-xSb system.
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