Accession Number:

ADA017604

Title:

Infrared Response of Impurity Doped Silicon MOSFET's (IRFET's)

Descriptive Note:

Semiannual technical rept. no. 2, 1 Feb-1 Aug 1975

Corporate Author:

ARKANSAS UNIV FAYETTEVILLE DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1975-08-01

Pagination or Media Count:

89.0

Abstract:

Operation and characteristics of the indium doped infrared sensing MOSFET IRFET are described. Responsivities of over 40 milliwattsmicrojoule have been observed with only small channel width to length ratios and large area devices. Much higher responsivities would be possible with smaller area devices and larger width to length ratios. This device is anticipated to be particularily usefull in the 3 to 5 micrometer wavelength range, and operates at temperatures less than 50K. Preliminary results have been obtained on the operation of the gallium doped infrared sensing MOSFET at 24.5K. A theoretical analysis shows that all surface type semiconductor infrared detectors, CID, CCD, or IRFET have essentially the same maximum attainable signal to noise ratio under shot noise or background limited operation.

Subject Categories:

  • Electrical and Electronic Equipment
  • Infrared Detection and Detectors
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE