Chemical Vapor Deposition of Chalcogenide Semiconductors.
Final technical rept. 1 Jul 73-31 Dec 74,
MASSACHUSETTS INST OF TECH CAMBRIDGE CENTER FOR MATERIALS SCIENCE AND ENGINEERING
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Polycrystalline CdTe was prepared by vapor deposition. The elements were vaporized and carried to the reaction chamber using He 8 H2 as the carrier gas all at 1 atm total pressure. Deposition rates were 0.1-0.01 mmhr at temperatures between 725-785C. Columnar grains and micron size pores were found in all samples. Electrical property measurements and x-ray texture studies were made. Transmission electron microscopy elucidated the nature of precitates and voids 50-100 A in the as grown material and material from other sources. Scattering theory calculations indicate orders of magnitude agreement with the observed absorption coefficients at 10.6 micrometers. A new absorption measuring technique was developed capable of determining beta accurately on small samples. The thermal shift in the fundamental absorption edge due to infrared absorption 10.6 micrometers was used. Both the theory and measurement system were defined.
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