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Radiation Effects and Material Studies in PbSnTe.
INTELCOM RAD TECH SAN DIEGO CALIF
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The electrical and optical properties of Pb1-xSnxTe were measured before, during, and after various electron, gamma, and neutron irradiations, and during the subsequent isochronal annealing. Irradiations of n- and p-type materials were made at 10 and 80K. At 10K, carrier removal and mobility decreases were observed during electron irradiations of p-type samples, while carrier addition and mobility increases were seen in n-type material. These results and others were consistently explained in terms of a mixed defect introduction model that was developed. Carrier lifetime studies indicated that the lifetime in an n-type sample was less than 10 to the minus 7th power sec at 80K and increased to about 0.000003 sec at 10K. Temperature dependence measurements indicate that the lifetime in the n-type sample was controlled by radiative recombination. Correlating the radiation damage as a function of irradiating particles was pursued to provide a means of predicting the relative damage to be expected in various environments.
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