Anisotropic Transport Effects in IGFETS.
Annual rept. no. 1,
CALIFORNIA UNIV LOS ANGELES SCHOOL OF ENGINEERING AND APPLIED SCIENCE
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The project deals with investigations into charge transport and subbanding in semiconductor FET systems. It has been observed that the transport anisotropy diminishes with decreasing MOSFET inversion density. This is interpreted as a washing-out of the subband structure by the channel width modulating effects of the trapped surface charge.
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