Damage Profiles in Silicon and Their Impact on Device Reliability
Technical rept. 1 Jan-30 Jun 1975
IBM CORP HOPEWELL JUNCTION NY EAST FISHKILL LABS
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This report describes work dealing with improvements of advanced measurement techniques. Chapter 1 deals with the computer generation of Kikuchi patterns needed for complex structural analysis of crystal defects in silicon. The program is applicable to a large variety of problems and can be used to generate Kikuchi maps for different crystal structures, each desired crystal orientation, and electron energy. The program can also be used to generate channeling patterns for scanning electron microscopy application. The report provides a complete set of computer-generated Kikuchi maps for silicon and 200 keV electrons. A complete program in Fortran IV using an IBM 1800 computer is also given. The second part describes the application of MOS C-V and MOS G-V measurements for the evaluation of epitaxial films on silicon or insulator substrates. It is shown that the presence of an underlying junction requires important precautions with use of the MOS C-V measurement technique. The junction requires an increased number of components in the equivalent network, which impedes the analysis. This chapter shows how to solve the problem. Values for MOS dot diameter, layer and substrate resistivity, oxide thickness, etc. are given and refer to ranges where meaningful lifetime measurements can be carried out.
- Solid State Physics