Accession Number:

ADA017205

Title:

Technology and Physics of Infrared and Point Contact Diodes

Descriptive Note:

Semiannual technical rept. no. 2

Corporate Author:

MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF PHYSICS

Personal Author(s):

Report Date:

1975-09-09

Pagination or Media Count:

15.0

Abstract:

Background work for this contract performed by this laboratory has shown that the tunneling characteristics of junctions formed by a very thin dielectric layer surrounded by two metals is independent of frequency from DC through 10 micrometer wavelength. These junctions may be formed by a point contact on a lightly oxidized metal surface. Principal work done this period was construction of a mathematical model for an infrared antennadiode combination and calculation of the expected operating parameters. A closed form analytical approximation was made and experimental checks on the model validity were started. An article based on this work will be prepared.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE