Technology and Physics of Infrared and Point Contact Diodes
Semiannual technical rept. no. 2
MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF PHYSICS
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Background work for this contract performed by this laboratory has shown that the tunneling characteristics of junctions formed by a very thin dielectric layer surrounded by two metals is independent of frequency from DC through 10 micrometer wavelength. These junctions may be formed by a point contact on a lightly oxidized metal surface. Principal work done this period was construction of a mathematical model for an infrared antennadiode combination and calculation of the expected operating parameters. A closed form analytical approximation was made and experimental checks on the model validity were started. An article based on this work will be prepared.
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