Detecting Impurity Levels in GaAs using Electroreflectance.
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING
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The monitoring of the implantation process is the topic of this study. Surface barrier electroreflectance ER measurements on the fundamental edge of both melt-doped and ion-implanted gallium arsenide GaAs at 300K, using the field-effect technique, reveal structure related to impurity energy levels. Comparison of ER curves of epitaxial, as-grown, melt-doped, and ion-implanted GaAs shows the broadening of the lineshape due to the presence of impurities. Silicon, chromium, cadmium, tellurium, zinc, and tin impurities in melt-doped GaAs and tellurium, sulfur, cadmium, and zinc impurities in ion-implanted GaAs are related to structure in the ER spectrum. The effect of varying modulated voltage, DC bias, impurity concentration, and annealing on the ER spectrum of GaAs is reported.
- Solid State Physics