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Detecting Impurity Levels in GaAs using Electroreflectance.
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING
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The monitoring of the implantation process is the topic of this study. Surface barrier electroreflectance ER measurements on the fundamental edge of both melt-doped and ion-implanted gallium arsenide GaAs at 300K, using the field-effect technique, reveal structure related to impurity energy levels. Comparison of ER curves of epitaxial, as-grown, melt-doped, and ion-implanted GaAs shows the broadening of the lineshape due to the presence of impurities. Silicon, chromium, cadmium, tellurium, zinc, and tin impurities in melt-doped GaAs and tellurium, sulfur, cadmium, and zinc impurities in ion-implanted GaAs are related to structure in the ER spectrum. The effect of varying modulated voltage, DC bias, impurity concentration, and annealing on the ER spectrum of GaAs is reported.
APPROVED FOR PUBLIC RELEASE