Basic Semiconductor Heterojunction Studies.
Final rept. 1 Oct 71-31 Dec 74,
CARNEGIE-MELLON UNIV PITTSBURGH PA
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Heterojunction structures of pGe-nGaAs and pGe-nAlGaAs prepared by a GeI2 disproportionation growth process have been examined. Also studied have been nAlGaAs-pGaAs and AlGaSb-GaSb structures prepared by liquid-phase epitaxy. Such heterojunctions have application to injection lasers, solar cells, cold cathodes and infrared photocathodes. In support of the studies, information was obtained on the growth and characterization of AlGaSb and on the minority carrier diffusion length in GaAs. The electrical and photoluminescent properties of ZnSe, which has a close lattice match to Ge and GaAs, were also studied.
- Solid State Physics