Accession Number:

ADA017177

Title:

Basic Semiconductor Heterojunction Studies.

Descriptive Note:

Final rept. 1 Oct 71-31 Dec 74,

Corporate Author:

CARNEGIE-MELLON UNIV PITTSBURGH PA

Personal Author(s):

Report Date:

1975-08-29

Pagination or Media Count:

52.0

Abstract:

Heterojunction structures of pGe-nGaAs and pGe-nAlGaAs prepared by a GeI2 disproportionation growth process have been examined. Also studied have been nAlGaAs-pGaAs and AlGaSb-GaSb structures prepared by liquid-phase epitaxy. Such heterojunctions have application to injection lasers, solar cells, cold cathodes and infrared photocathodes. In support of the studies, information was obtained on the growth and characterization of AlGaSb and on the minority carrier diffusion length in GaAs. The electrical and photoluminescent properties of ZnSe, which has a close lattice match to Ge and GaAs, were also studied.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE