DID YOU KNOW? DTIC has over 3.5 million final reports on DoD funded research, development, test, and evaluation activities available to our registered users. Click HERE
to register or log in.
Transient Radiation Effects.
Final rept. Jun 73-Jan 75,
INTELCOM RAD TECH SAN DIEGO CALIF
Pagination or Media Count:
Studies are presented of the effects of the interaction of radiation with matter. Displacement damage in compound semiconductors is considered, with emphasis on GaAs. The temperature dependence of electron damage is determined, as well as the relative damage as a function of electron and neutron energy. Transient conductivity measurements on GaAs have been able to detect carrier lifetime at 300K in the nanosecond range. The response of AlSiO2Si n-type MOS devices to pulsed 30-MeV electron irradiations has led to the identification of a new charge-transfer effect. Models are presented of this effect and of gate threshold shifts for clean oxides and aluminum ion-implanted clean oxides using the PN code. Also presented is a study of the dependence of the charge released to an external circuit by a capacitor subsequent to burn-in through both thermal and radiation-induced depolarization of the space-charge fields.
APPROVED FOR PUBLIC RELEASE