Characterization of High Frequency Probe Assembly for Integrated Circuit Measurements.
Final rept. 10 Jan-30 Jun 74,
NATIONAL BUREAU OF STANDARDS BOULDER COLO ELECTROMAGNETICS DIV
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A detailed, applications-oriented description of a measurement technique that characterizes a high-frequency probe assembly for integrated circuit measurements is given along with the procedure that extracts the parasitic effects of the probe assembly. The scattering parameters of an integrated-circuit device or transistor can now be extracted and accurately determined up to 2 GHz at the wafer stage of assembly. This represents a significant advance over conventional techniques that enabled only dc parameters to be measured. Measurement results using this technique are given along with the precision of values obtained as well as the nature of bias introduced. Author
- Electrical and Electronic Equipment