Accession Number:

ADA014529

Title:

Silicon Planar n-p-nn+ Microwave Transistors Obtained by the Method of Ion Implantation,

Descriptive Note:

Corporate Author:

ARMY FOREIGN SCIENCE AND TECHNOLOGY CENTER CHARLOTTESVILLE VA

Report Date:

1975-03-21

Pagination or Media Count:

8.0

Abstract:

The production with ion beams of devices based on two and more junctions, in particular, bipolar transistors, is discussed. Ion implantation in combination with planar technology was used to develop n-p-nn transistors on silicon. It was possible to produce microwave silicon transistors with parameters close to those of the best models produced by the diffusion method.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE