Silicon Planar n-p-nn+ Microwave Transistors Obtained by the Method of Ion Implantation,
ARMY FOREIGN SCIENCE AND TECHNOLOGY CENTER CHARLOTTESVILLE VA
Pagination or Media Count:
The production with ion beams of devices based on two and more junctions, in particular, bipolar transistors, is discussed. Ion implantation in combination with planar technology was used to develop n-p-nn transistors on silicon. It was possible to produce microwave silicon transistors with parameters close to those of the best models produced by the diffusion method.
- Electrical and Electronic Equipment