Microminiature Silicon Hall Generators,
FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
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Specimens of microminiature Hall generators based on epitaxial silicon films on sapphire substrate have been developed and investigated. Some properties of these Hall generators are active area approximately 60x60 square micrometers thickness approximately 3 micrometers input and output resistance approximately 400 to 500 ohms specific sensitivity approximately 4.5 VA.T temperature coefficient of specific sensitivity does not exceed 0.1 degree.
- Electric Power Production and Distribution