Accession Number:

ADA014275

Title:

Vertical Channel Metal-Oxide-Silicon Field Effect Transistor.

Descriptive Note:

Annual rept. Aug 74-Oct 75,

Corporate Author:

WESTINGHOUSE ELECTRIC CORP PITTSBURGH PA RESEARCH AND DEVELOPMENT CENTER

Report Date:

1974-11-01

Pagination or Media Count:

67.0

Abstract:

A large gate periphery 6200 micrometer vertical channel microwave silicon MOS transistor has been developed which is capable of operating up to a frequency of 4.5 GHz, and delivering more than 1.6W of linear Class A power at 0.5 GHz. The maximum drain current and voltage capabilities of the device are 1A and 32 volts respectively, and the saturated transconductance is over 0.12 mhos. A yield of greater than 50 has also been established in device fabrication. Based on these results, an even larger periphery device is projected to operate at frequencies much higher than 4.5 GHz.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE