Accession Number:

ADA014256

Title:

EBS (Electron Bombarded Semiconductor) RF Amplifier Design

Descriptive Note:

Technical note

Corporate Author:

MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB

Personal Author(s):

Report Date:

1975-07-31

Pagination or Media Count:

80.0

Abstract:

This report presents a comprehensive design criteria for EBS RF power amplifiers which incorporates all pertinent design parameters associated with both the electron beam and semiconductor diode targets. The derivation of the design model is described in detail, and an example amplifier design is carried out yielding an optimum set of device specifications and summary of predicted performance.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE