EBS (Electron Bombarded Semiconductor) RF Amplifier Design
MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB
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This report presents a comprehensive design criteria for EBS RF power amplifiers which incorporates all pertinent design parameters associated with both the electron beam and semiconductor diode targets. The derivation of the design model is described in detail, and an example amplifier design is carried out yielding an optimum set of device specifications and summary of predicted performance.
- Electrical and Electronic Equipment
- Solid State Physics