Integrated Optical Modulators for 10 Micron Wavelengths.
Final rept. 19 Apr 74-28 Feb 75,
ROCKWELL INTERNATIONAL CORP ANAHEIM CALIF ELECTRONICS RESEARCH DIV
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An infrared integrated optics technology for use in the 10 micrometer region of the spectrum has been developed as reported herein comprising the active signal processing modulation functions temporal and spatial as may be applied to a CO2 laser transmitter and heterodyne receiver system. Specifically, a traveling wave electro-optic interaction is considered for the phase modulation requirement while a surface elasto-optic is considered for the frequency shifter requirement. The traveling wave electro-optic interaction has employed waveguide field containment in both transverse dimensions to achieve an efficient interaction. The application of the modulation signal has been implemented using both the slot and strip transmission line configurations containing the optical waveguide for phase matching to achieve wide bandwidth. Heteroepitaxial GaAs is employed as the electro-optic material with a heteroepitaxial GaAlAs alloy as isolation layers on a substrate of high resistivity GaAs. Devices fabricated have been operated as lumped elements and as traveling wave structures and characterized at 1.15 and 10.6 micrometers.
- Line, Surface and Bulk Acoustic Wave Devices
- Electrooptical and Optoelectronic Devices
- Fiber Optics and Integrated Optics