Accession Number:

ADA011708

Title:

Investigations of Technical Problems in Gallium Arsenide

Descriptive Note:

Semi-annual technical rept. no. 3

Corporate Author:

ROCKWELL INTERNATIONAL CORP THOUSAND OAKS CA SCIENCE CENTER

Report Date:

1975-02-05

Pagination or Media Count:

108.0

Abstract:

Various technological problems in the development of GaAs microwave devices are covered in this report. The work reported here includes epitaxial growth of ultra-thin and high-resistivity films, study of the relationship between device performance and material parameters using IMPATT diodes, annealing study of n-n interfaces to improve their electrical properties, growth of semi-insulating substrates and characterization techniques, and study of ion implantation as a tool for microwave device fabrication.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE