1.06 Micrometer High Sensitivity IR Photocathode.
Final rept. 2 Jan-2 Oct 74,
ROCKWELL INTERNATIONAL CORP THOUSAND OAKS CALIF SCIENCE CENTER
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The design and progress towards a field-assisted double heterojunction photocathode with high quantum efficiency at 1.06 micrometers is reported. The basic device design was developed and the concept feasibility was demonstrated in a preceeding program. In this program the authors have further improved the design and achieved uniform and reproducible performance from the test devices. Internal electron transport efficiencies approaching 70 percent have been measured. However, the external quantum efficiency at 1.06 micrometers is low due to an unfavorable bandgap grading in the GaAsSb absorber layer. Further work to optimize the device design is recommended to realize the great potential of this double heterojunction structure for field-assisted photoemission.
- Electrical and Electronic Equipment
- Infrared Detection and Detectors